SSF2122E ? silikron semiconductor co.,ltd. 20 12 . 02 . 14 version : 1. 4 page 1 of 9 www.silikron.com main product characteristics: v dss 20 v r ds (on) 15.2 mohm (typ . ) i d 7 a features and benefits : description : absolute m ax rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v (silicon limited) 7 a i d @ tc = 100c continuous drain current, v gs @ 10v 5 i dm pulsed drain current 4 2 p d @tc = 25c power dissipation 1.4 w v ds drain - source voltage 20 v v gs gate - to - source voltage 12 v t j t stg operating junction and storage temperature range - 55 to + 150 c marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications . dfn 3 x 3 - 8l
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 2 of 9 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 20 v v gs = 0v, i d = 250a r ds(on) static drain - to - source on - resistance 15.2 23 m v gs =4.5v, i d = 4 a 15.9 24 v gs =4v, i d = 4 a 17.6 30 v gs =3.1v, i d = 4 a 20.8 35 v gs =2.5v, i d = 2 a v gs(th) gate threshold voltage 0.5 1 v v ds = v gs , i d = 250a 0.30 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 20 v,v gs = 0v i gss gate - to - source forward leakage 10 a v gs = 8 v - 1 0 v gs = - 8 v q g total gate charge 24.1 nc i d = 7 a , v ds = 10 v , v gs = 10 v q gs gate - to - source charge 1.4 q gd gate - to - drain("miller") charge 4.2 t d(on) turn - on delay time 5.3 n s v gs = 4 v, v ds = 10 v, r l = 2.86 , i d = 3.5 a t r rise time 18.2 t d(off) turn - off delay time 25 t f fall time 3 c iss input capacitance 681 pf v gs = 0v , v ds = 10 v , ? = 1m hz c oss output capacitance 124 c rss reverse transfer capacitance 117 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 7 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 42 a v sd diode forward voltage 0.7 1.2 v i s = 1.5 a, v gs =0v t rr reverse recovery time 34.3 n s t j = 25c, i f =7a, di/dt = 100a/s q rr reverse recovery charge 10.2 nc
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 3 of 9 www.silikron.com test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) = 150 c.
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 4 of 9 www.silikron.com t ypical electrical and thermal characteristics figure 2. typical transfer characteristics figure 1: typical output characteristics fig ure 3. gate to source cut - off voltage figure 4: drain - to - source breakdown voltage vs. temperature
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 5 of 9 www.silikron.com fig ure 5 . normalized on - resistance vs. case temperature case temperature t ypical electrical and thermal characteristics fig ure 6 . normalized on - resistance vs. gate to s ource voltage fig ure 7 . typical capacitance vs. drain - to - source voltage case temperature fig ure 8 . ga te - charge characteristics
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 6 of 9 www.silikron.com t ypical electrical and thermal characteristics fig ure 9 . maximum drain current vs. case temperature fig ure 10 . forward current vs. diode forward voltage fig ure 11 . power dissipation vs. case temperature
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 7 of 9 www.silikron.com mechanical data dfn33 - 8l package outline dimension : min nom max min nom max a 0 .700 0 .80 0.900 0 .0276 0 .0315 0 .0354 a1 0 .00 - -- 0 .05 0 .000 - -- 0 .002 b 0 .24 0 .30 0 .35 0 .009 0 .012 0 .014 c 0 .08 0 .152 0 .25 0 .003 0 .006 0 .010 d e e1 e l 0 .20 0 .375 0 .450 0 .008 0 .0148 0 .0177 l1 0 - -- 0 .100 0 - -- 0 .004 1 0 1 0 12 0 1 0 12 d im. 2 .90 bsc 0. 114 bsc 2.80 bsc 2.30 bsc 0.65 bsc 0.110 bsc 0.091 bsc 0.026 bsc millimeters i nches
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 8 of 9 www.silikron.com ordering and marking information device marking: 2122e package (available) dfn 3 x 3 - 8l operating temperature range c : - 55 to 150 oc devices per unit package type units/ t ape t ape s/ inner box units/ inner box inner boxes/ carton box units/ carton box d dfn 3 x 3 - 8l 3000pcs 4 pcs 12 000pcs 4pcs 48 000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 1 5 0 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 2122e ? silikron semiconductor co.,ltd. 20 11 . 02 . 14 version : 1. 4 page 9 of 9 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonab ly exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipm ent failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or c ontained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in t he customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures coul d give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occu r. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semicon ductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or impli ed regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when desi gning equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service: sales@ silikron .com technical support : technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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